A new route of synthesizing atomically thin 2D materials embedded in bulk oxides

Abstract

Conventional mechanical or chemical exfoliation approach of 2D material synthesis is largely dependent on the inherent structure of the parent material, i.e., whether it is a layered structure or a 3D bulk structure with embedded 2D substructures. A recent experiment demonstrated that unprecedented atomically thin metal oxides without bulk layered structures can be synthesized by using liquid metals. Supported by an experimental realization of atomically thin W layers through the metal atomic layer deposition method, we propose a new type of transition metal (TM)-based 2D materials that can be stabilized at the oxide interfaces with oxide substrates and overlayers. Based on the ab initio density functional theory calculations, we show that most of the TM elements can form unprecedented atomically thin 2D materials by the surface oxygen passivation, which is available from the oxide substrate and the overlayer. The stabilized 2D TM layers show diverse electronic and magnetic properties. Our results suggest a novel way to extend 2D materials study and a possible application of those 2D TM layers embedded in oxides.