Abstract
Cadmium telluride (CdTe) is a binary II-VI direct band gap semiconducting material. Cadmium telluride is a promising electrochemical and photovoltaic material for thin film solar cells. It shows both p and n type conductivity. A nanocrystalline thin film of CdTe was deposited in homogeneous medium on nickel plate by chemical bath deposition method containing 0.01 M cadmium acetate and 0.02 M tellurium dioxide. The structural, compositional and optical analysis were studied by x-ray diffraction (XRD), energy-dispersive x-ray spectroscopy (EDS), scanning electron microscope (SEM), Fourier Transform infrared spectroscopy (FTIR) and Photoluminescence (PL).The diffraction peak observed at 2θ = 23.59° with (1 1 1) plane indicate the crystalline phase of CdTe film. The average crystalline size is measured to be 7 nm. Compositional analysis reveals the presence of both Cd and Te elements. The EDS Spectroscopy shows the ratio of Cd and Te is1:2 in case of as deposited film. The Photoluminescence peak is observed at 471 nm.
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