Abstract
A new technique has been developed to avoid constitutional supercooling in the growth of gallium arsenide by liquid phase epitaxy from an unconfined Ga-rich solution. This technique utilises a graphite boat that permits the growth solution to be initially saturated with GaAs at a temperature significantly higher than the substrate temperature. The boat is rotated to bring the solution into contact with the substrate, and rotated again to decant the solution after the growth is completed. If the initial temperature difference between the solution and the substrate is high enough, constitutional supercooling does not occur, and this procedure yields epitaxial layers with smooth surfaces free of cellular structure.
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