Abstract
A new plasma-based copper etch process that operated at room temperature using a conventional parallel-plate electrode design is discussed. In this paper, authors review the reaction mechanism and compare process parameters, such as gas type, pressure, and power, affecting the plasma–copper reaction rate and the edge profile of the etched pattern. Small geometry copper patterns, e.g., less than 0.8 μm, are successfully etched with this new method. This new process is applicable to many nano and microelectronic devices.
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