Abstract
We perform a theoretical study on a low dark current InGaAs/GaAsvery-long-wavelength (>12 μm) quantum well infraredphotodetector (VLW-QWIP), based on a double barrier resonant tunnellingstructure (DBRTS). The ground tunnelling state of the central quantumwell (QW) of the DBRTS can resonate with the first excited bound stateof the doped InGaAs QW by adjusting the structure parameters of theDBRTS. Investigation of the carrier transport performance of this deviceis carried out based on quantum wave transport theory. It has beenshown that the dark current in this device can be significantly reducedby two orders compared to conventional InGaAs/GaAs VLW-QWIPs, while thephotocurrent is almost the same as those in conventional VLW-QWIPs.This DBRTS integrated VLW-QWIP structure may stimulate the experimentalinvestigation for VLW-QWIPs at high operation temperatures.
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