Abstract

AbstractA new counterflow jet reactor has been designed to study the purely homogeneous kinetics of endothermic reactions. The reactor consists of two vertical, coaxial, counterflowing, laminar jets and radial‐flow exit region. It can be used to generate a reaction zone near the stagnation point and away from walls, thus eliminating the possibility of surface reactions. One jet is heated and contains only a suitable carrier gas such as hydrogen and nitrogen, while the other is unheated and contains the compound(s) under study diluted in the same carrier gas. A 2‐D model of the process has been used to simulate the thermal decomposition of tertiary‐butyl‐arsine, a precursor for metal‐organic chemical vapor deposition of GaAs films. Performance diagrams based on Reynolds and Demköhler numbers were constructed to identify optimal operating conditions and to demonstrate the feasibility of the technique. This reactor appears to be an attractive choice for studies of the purely homogeneous kinetics of endothermic reactions at pressures close to atmospheric.

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