Abstract
With the effects of equivalent oxide charges on the flat-band voltage, a new quasi-three-dimensional (quasi-3-D) compact threshold voltage model is presented for the pi-gate (ΠG) MOSFETs with the interface trapped charges based on the quasi-3-D scaling equation that accounts for equivalent number of gates and virtual back gate effects induced by the normalized gate extension depth in the buried oxide. The model reveals that a thin gate oxide can effectively reduce the threshold voltage degradation caused by the trapped charges. Opposite to the thin gate oxide, a thick silicon is required to alleviate the threshold voltage shift resulted from the negative trapped charges. For the short-channel behavior, the device with negative/positive trapped charges can decrease/increase the threshold voltage roll-off caused by the short-channel effects. Due to its computational efficiency and simple formula, the model can be easily used to explore the threshold behavior for the charges trapping ΠG MOSFETs.
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