Abstract
A new Maia detector is being currently developed, consisting of an array of 384 silicon drift detectors (SDDs), each having an area of 1 mm2. The detector features a new double metal scheme that supplies biases to the pixel SDD rings. All 384 anodes of SDDs are meant to be connected to individual electronic channels. This effort was motivated by the need of improving the energy resolution and the throughput of the existing Maia detectors whose pixels are based on p-in-n diodes. In order to use the existing circuit boards and back-end electronics that have already developed for the original Maia, the SDD-Maia detector was designed with an identical footprint, after replacing the p-in-n diodes with SDDs. The design, fabrication and performance of a first prototype detector will be presented.
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