Abstract
A new circuit to protect lateral emitter switched thyristors (LESTs) for high voltage current saturation is proposed. We fabricated this circuit by employing a widely used process compatible with insulated gate bipolar transistors (IGBTs). When the floating n+ voltage is larger than the threshold voltage of protecting metal oxide semiconductor field effect transistor (MOSFET), the protective circuit alters the operation of the LEST from regenerative mode to non-regenerative mode. Experimental results showed that a high voltage current saturation exceeding 200 V was measured in the LEST with the proposed protective circuit, while the current saturation of the conventional LEST was limited to 17 V. This allowed the LEST to withstand the hard switching fault (HSF) condition over 10 µs during the hard switching fault (HSF) condition.
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