A new process for minimizing residual silicon and carbon of reaction-bonded silicon carbide via chemical vapor deposition

Abstract

In order to reduce the amount of excess silicon and carbon, reaction-bonded silicon carbide was fabricated by liquid silicon infiltration using a porous carbon preform prepared by chemical vapor deposition. A carbon preform was fabricated at 1100−1400 ℃ at 6.6 kPa for 1 h using acetylene. The deposited carbon preform has a porous structure with nano-sized carbon particles and uniform pore size distribution. Depending on the deposition temperature of the carbon preform, the porosity, the pore size, and the size of the carbon particles were controlled. As the deposition temperature increased, the porosity and average pore size increased, but the average carbon particle size decreased. The residual silicon of the prepared reaction-bonded silicon carbide was 2.7 % when the porosity of the carbon preform deposited at 1100 °C was 51.1 %. The hardness increased up to 21.7 GPa as the amount of the residual silicon reduced.