Abstract
A new power MOSFET with self current limiting capability is proposed and verified by mixed-mode simulations. The MOSFET consists of a main power cell, a sensing cell and a newly designed lateral npn bipolar transistor. The new device may be fabricated by a conventional DMOS process without any additional mask step. The overcurrent state is sensed by the pinched base resistor of an npn transistor, the sensing and main MOSFETs have nearly identical source–drain voltage, and the current mirror relation is maintained. The limiting current level is adjusted easily by a shunting resistor. Mixed-mode simulation results show that the on-resistance of the power MOSFET is not deteriorated by the sensing and protection circuit. The overcurrent protection is successfully achieved with the protection area less than 0.2% of the whole die area.
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