Abstract
This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), concentration of SiC grit in slurry at 25%, polishing load at 50 gram, turning speed at 10,000 rpm, absorption time of polishing pad at 15 minutes.
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