Abstract
A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The IV characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.
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