A new PBIID processing system supplying RF and HV pulses through a single feed-through

Abstract

A new type of plasma based ion implantation and deposition system (PBIID) was developed. In this system, an RF pulse for plasma generation and a high-voltage pulse for ion implantation were supplied to a target through a single feed-through. Temporal and spatial evolutions of RF plasma around a spherical RF antenna were measured with a Langmuir probe. The plasma density had the largest value close to the RF antenna, while the electron temperature was almost constant in space. The plasma density after the RF pulse decreased almost exponentially in time and reduced more quickly in the region near the antenna. Using hydrocarbon gases in the PBIID system, the DLC film was prepared on an Si wafer substrate on each surface of the hexagonal sample holder. The thickness of each film was significantly uniform (93% in uniformity). The average thickness was 3.8±0.24 μm for a deposition time of 4 h, showing a deposition rate of 0.95 μm/h.