Abstract
AbatractThis research reports oxygen zinc magnesium (MgZnO)/gold (Au) photodetectors (PD) and organic-inorganic semiconductors MgZnO/Au/poly(3,4-ethylenedioxythio-phene): poly(4-styrenesulfonate) (PEDOT:PSS) PD research. At room temperature, spin-coating and radio frequency (RF) magnetron sputtering were used to deposit PEDOT:PSS layer and MgZnO thin film on the substrate, respectively. The properties of the heterojunction formed on the MgZnO/PEDOT:PSS inorganic/organic contact interface were studied. In order to manufacture ultraviolet (UV) heterojunction PDs, PEDOT:PSS is used as the hole transport layer (HTL), and MgZnO is used as the electron transport layer (ETL). This heterojunction shows excellent ultraviolet light detection capability. Under 40 V bias, the responsivity of MgZnO/Au PD and MgZnO/Au/PEDOT:PSS heterojunction PD are 0.0473 A W−1 and 0.134 A W−1 under ultraviolet irradiation, respectively. The device shows good Schottky contact between metal semiconductor junctions. The excellent UV detector performance is due to the strong UV absorption of PEDOT: PSS.
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