Abstract
A new optoelectronic integrated device is proposed for a light-amplifying optical switch (LAOS). The device is composed of an optical field-effect transistor (OPFET) in series with a light source which may be either a double heterostructure light-emitting diode (LED) or laser diode (LD). A quantitative circuit model for the proposed LAOS is presented and theoretical investigation is carried out for developing a current-voltage (I-V) relation for the device. It is shown analytically that switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR) when a voltage greater than the breakover voltage is applied.
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