A New Nonisolated Quasi-Z-Source Inverter With High Voltage Gain

Abstract

This paper proposes a new high-boost quasi-Z-source inverter (qZSI) with combined two quasi-Z-source networks, which has a common ground between the input source and the inverter bridge. Compared with other noncoupled inductor-based (q)ZSIs, by using the same total number of passive and active components, the proposed inverter provides higher boost capability, requires smaller inductance and capacitance values at the impedance network, achieves lower voltage stress across the active switching devices, and has higher modulation index for the inverter bridge to improve the output waveform quality. Although the proposed inverter has the same voltage boost factor with the enhanced boost (q)ZSIs (EB-ZSI) and EB-qZSIs, the proposed scheme has lower capacitor voltage stress than EB-ZSI and has higher efficiency than EB-qZSI. The topological configuration, operating principles, power loss analysis, and performance comparison with other high-boost (q)ZSIs are presented. Finally, both simulations and experimental results are given to validate the aforementioned characteristics of the proposed topology.