Abstract
We experimentally confirmed a basic operation of the n-channel junction field-effect transistor (JFET) embedded in the i layer (n- substrate) of a pin diode for X-ray detectors, which was proposed in Jpn. J. Appl. Phys. 37 (1998) L115. To electrically isolate the n-channel from the n- substrate, a p+ ring is formed around the JFET and is reverse-biased, instead of a deep p layer under the n-channel (i. e. , the conventional structure). In the proposed structure, only one type of donor is ion-implanted in the n-channel, while in the conventional structure, both donor and acceptor are ion-implanted there. For the first time, the role of the p+ ring in the electrical characteristics of the n-channel JFET is experimentally elucidated.
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