A New Multiplex Input Technique For High Density CCD Memory

Abstract

A new multiplex input technique utilizing a charge splitting operation is proposed for high density CCD memory. This technique permits effective arrangement of the high sensitivity sense amplifiers. As a result, the repeat spacing of the CCD shift registers becomes minimum value which is given only by the channel plus isolation width. An all TTL compatible 64 K-bit CCD memory has been designed and fabricated to demonstrate this new technique.