Abstract
A new multicolor ac thin-film electroluminescent device is hereby proposed. This device differs from usual devices in the structure of its active layer, i.e., the additional layer (‘‘gate layer’’) is buried in ZnS active layers. Thus, the structure of the device is a glass substrate: SnOx-Y2O3-ZnS:SmF3-gate layer-ZnS:ErF3-Y2O3-Al. In particular, when the gate layer is a thin SmF3 film (approximately 500 Å) or an extremely thin Al film (approximately 100 Å), the emission color of the device continuously varies between red and green with the driving voltage or frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
