Year-end Sale % OFF 
Abstract
A new method for growing cadmium mercury telluride (CMT) is described where alternate thin layers of CdTe and HgTe are grown by metalorganic vapour phase epitaxy (MOVPE) and allowed to interdiffuse at the growth temperature. Using this technique epitaxial layers have been grown with both good depth and lateral uniformity and a reflective surface finish. Preliminary electrical measurements indicate that for the best layers the electrical properties are dominated by mercury vacancies rather than impurities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
