A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency <inline-formula> <tex-math notation="LaTeX">${C}-{V}$ </tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Measurements

Abstract

For a very thin dielectric MOS capacitor, the influence of the interface layer on MOS capacitance extraction is not negligible. We report a new correction method for a thin dielectric MOS capacitor based on the five-element model, which includes MOS capacitance, parallel resistance, series resistance, interface capacitance, and interface resistance. This method needs to combine double-frequency $C$ – $V$ and $I$ – $V$ measurement data. By comparing the impedance of the five-element model with that of the two-element model, we have five characteristic equations. From these equations, we deduce a five-degree equation and then provide accurate numerical solutions for all five elements. Furthermore, we successfully demonstrate an application to Al/ZrO2/IL/n-Si capacitor (IL: interface layer). After correction, the frequency dispersion and upturn (or roll-off) of MOS capacitances at accumulation disappear. This correction method is superior to other methods. All five parameters in the five-element model have physically reasonable values. The relative dielectric constant ( $\varepsilon _{\mathrm { {r}}})$ and dielectric loss (tan $\delta )$ are also calculated. These results show the validity and self-consistency of this new correction method.