Abstract
An analysis is made of the switching performances of fabricated ultrathin-film submicrometer-gate CMOS/SIMOX ring oscillators. A time-dependent gate capacitance model is proposed to explain the switching operation mechanism. It is found that reducing the gate capacitance by full depletion of the body silicon dramatically improves the propagation delay time of CMOS/SIMOX.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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