Abstract
The development of a novel GaAs dual-gate MESFET model suitable for the design and analysis of microwave circuits is described. This quasi-two-dimensional physical model is numerically efficient due to a unique formulation of the carrier transport equations. The model includes a comprehensive description of the geometric and material parameters accounting for recess structures, nonuniform doping profiles, current injection into the buffer layer, forward-biased gate conduction, and surface depletion. The accuracy of the model under DC, small-signal, and large-signal operating conditions is assessed by comparing simulated and measured performance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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