A new model for the current factor mismatch in the MOS transistor

Abstract

This paper presents a new model for the current factor mismatch of the MOS transistor. It demonstrates that the impact of interface states is negligible. Therefore, the analytical model is based on the random variations of the dopant number in the channel region, similarly to V t mismatch model. As a result, the theoretical value of the matching parameter A β is 0.26%.μm for NMOS and 0.51%.μm for PMOS transistors that is close to experimental results.