Abstract
Enhanced device degradation of low-temperature n-channel polycrystalline thin-film transistors (poly-silicon TFTs) under exposure to ac stress has been quantitatively analyzed. This analysis showed that degradation of the device characteristics of a single-drain (SD) TFT is greater under ac stress than under dc stress over an equivalent period. It was found that hot holes are strongly related to this greater severity of degradation. Moreover, a lightly doped drain (LDD) TFT is less strongly affected, and the effect is dominated by accumulated drain-avalanche hot-carrier (DAHC) stress. It was also found that differences between the electric field in the respective channel regions are responsible for the different degradation properties of SD and LDD TFTs. It was shown that the severe degradation under ac stress in an SD TFT is caused by increased DAHC stress, to which electrons emitted from the trap states when the TFT is turned off make significant contributions.
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