Abstract
A new low-loss, low sintering temperature microwave dielectric material Ni0.5Ti0.5NbO4 was investigated for the first time. The samples were prepared by solid state reaction method. Single phase Ni0.5Ti0.5NbO4 was obtained and it showed Rutile structure. The variation trend of dielectric constant is in accordance with variation trend of relative density. When the sintering temperature was lower than 1100°C, the Qf value mainly depended on the density. However, when the sintering temperature was higher than 1100°C, the Qf value mainly depended on crystal structure. With increase of unit cell volume, the τf increased. The following typical values ε=56.8, Qf=21,100GHz, τf=79.1×10−6/°C were obtained for Ni0.5Ti0.5NbO4 (1100°C/6h). According to the EIA-198-E, Ni0.5Ti0.5NbO4 met the demand of P2G (N150 for Industry Codes) series.
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