A new microstrip detector with double-sided readout

Abstract

A silicon microstrip detector has been developed with 50- mu m-pitch strips on both the p- and n-side, using the principle of capacitive coupling between p/sup +/ diode strips (respectively, n/sup +/ strips) and the metallization strips which connect to the front-end preamplifiers. The detector is biased on both sides via polysilicon resistors connecting each p/sup +/ or n/sup +/ line to a common bias bus. To allow ohmic separation at the n-side, the accumulation layer of electrons has to be disrupted between the n/sup +/ strips. This has been achieved in three different ways: by separate polysilicon lines on thick oxide between two adjacent n/sup +/ lines to break the conducting accumulation layer by externally induced field depletion or by using the metal lines of the n/sup +/ strips on thick oxide or on thin oxide. Results on 20*20-mm/sup 2/ test devices are presented. A preliminary analysis of the spatial resolution gives sigma =16 mu m on both sides. These results demonstrate that double-sided readout Si strip detectors can be used for experiments where spatial resolution in the 10 mu m range is needed. >