Abstract

In RF power device design, much of the analysis is based on measurements. Complete analysis by simulation is often avoided because the high-frequency, largesignal operation makes device simulation unsuitable, and the difficulties in obtaining a good physical compact model make circuit simulation inaccurate. This work presents a methodology that overcomes these limitations by utilizing a combination of device and circuit simulations to characterize large-signal operation of RF power devices quickly and accurately. Results show that circuit simulations using an extracted Root model agree well with device simulation for the intrinsic device. It is also demonstrated that changes in device design are reflected in circuit-level RF performance.

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