Abstract
In this letter, a new way of operating a split-gate vertical LOCOS MOSFET based on the depletion of the drift region by MOS capacitors is proposed. By using auxiliary bias on the split-gate electrode of the device, optimum drift-region charge can be increased to reduce its specific on-resistance. Theoretical investigation reveals that nearly 25% reduction in the on-state resistance can be achieved. If an additional bias is used on the split-gate electrode during on-state, a further improvement can be observed.
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