Abstract
A new method is proposed for the formation of Ge nanowires in a gate-all-around integration scheme. We combine the use of GeSn:P/Ge epitaxial stacks and low-temperature Cl2 vapor-phase etching to demonstrate a high etch selectivity of GeSn:P versus Ge. The process can be combined with an insitu passivation of the Ge nanowires, which can bring several advantages in view of improved process reliability and control.
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