Abstract

This paper describes a new method to determine the parameters of MOSFETs with deep-submicron channel length. The model shows that threshold voltage defined by I/sub d///spl radic/(g/sub m/)-V/sub g/ plot is consistent with the extracted effective channel length and series resistance. The experimental data show good linearity for the parameter extraction down to a 0.24 /spl mu/m transistor. The model is also found to be in good agreement for reproducing I/sub d/-V/sub g/ curves.

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