Abstract
In this letter, a new and simple radio-frequency (RF) -based method with dead-space-based theory considered for mixed avalanche and tunneling mechanisms is presented to determine the pure avalanche multiplication factor up to near 1 MV/cm for the first time. By extracting the equivalent circuit parameters based on a vector network analyzer, the avalanche multiplication factor can be determined and can be distinguished from the tunneling multiplication factor. The saturated avalanche multiplication factor with increased electric field is observed at high field. This saturated phenomenon obtained from experimental data is the first reported result for the two-terminal p-n junction. The validity of the obtained avalanche multiplication factor is verified by the dead-space-based theory. The proposed alternative avalanche multiplication factor extraction can be applied to breakdown characterization for the state-of-the-art device such as impact-ionization metal-oxide semiconductor (I-MOS) transistor and tunnel devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have