Abstract
A new method of investigating the quantum channel surface was used to study the germaniumquantum well in a SiGe/Ge/SiGe p-type heterostructure, with a hole concentrationpH = 5.68 × 1011 cm−2 andmobility μ = 4.68 × 104 cm2 V−1 s−1 in magnetic fields up to 15 T and in the temperature range 50 mK–3 K using Shubnikov–deHaas (SdH) oscillations. The method is based on the deviation from theory describing theSdH-related conductivity oscillations. This deviation appears due to extra broadening ofthe Landau levels, which is attributed to the existence of an inhomogeneous distributionof the carrier concentration in the two-dimensional hole gas layer and, hence,a spread of energy. It is assumed that extra broadening is due to the naturalvariation of the well width equal to the interatomic distance. The effective hole mass(m* = 0.112m0) was found from the temperature dependence of the SdH oscillation amplitudes. Thequantum scattering time, fluctuations of the carrier concentration and quantum wellroughness were estimated from the magnetic field dependence of these oscillationamplitudes.
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