Abstract
A new approach to broad-band matching which bypasses analytic gain-bandwidth theory and directly utilizes measured real frequency impedance data is applied to gain equalization and low-noise design of GaAs Shottky-barrier FET amplifiers. Neither the equalizer topology nor the analytic form of the system transfer function are initially assumed. These result from the design process. Examples include an octave-band FET amplifier design and a low-noise FET amplifier design. The equalizers are realized with lumped elements or transmission-fine sections. A single basic least squares program implements the design procedure.
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