Abstract
We propose a new algorithm to obtain the energy and the capture cross section of a deep trap in the band gap of a semiconductor from deep-level transient spectroscopy (DLTS) measurements. This numerical method requires only a single temperature cycle with a fixed rate window for data acquisition. It is capable to resolve DLTS signals with a shoulder, generated by two trap levels. Experiments with Schottky barrier diodes onn-GaAs demonstrate the contribution of a second trap to the EL6 level in GaAs and the superior reliability in cases of non-negligible resistivity of the back-contacts compared to conventional Arrhenius plot method.
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