A New Method for the Simultaneous Analysis of I-V/T and C-V/T Measurements of an Au/P-Inp Epitaxial Schottky Diode

Abstract

ABSTRACTWe have developed a new approach to analyze the current- voltage (I-V) characteristics of a tunnel metal-interface layer - semiconductor (MIS) diode which takes into account the voltage dependence of interface states distribution (Nss) and the barrier lowering due to image force. Our method of analysis uses simultaneously the I-V/T and C-V/T data to determine the characteristic parameters of an MIS diodes and is ideal for new epitaxial materials and devices where the carrier density is not known precisely before hand. The experimental verification of our approach to analyze the nonideal I-V/T and C-V/T characteristics of MIS diodes was done by comparing the values of Nss extracted from the room temperature forward I-V characteristics of a p-InP/Au MIS diodes with those obtained by the multi-frequency admittance method. Excellent agreement between the values of Nss determined by two different techniques strongly support the validity of our theoretical expression for the I-V/T characteristics and the method of analysis. Our results indicate that the interface layer thermionic emission was clearly the dominant mechanism of the forward current transport in epitaxial Au/p-InP MIS diodes over the temperature range 200–393 K. The transmission coefficient of the interface-layer obtained from the reverse I-V characteristics has a value of 1.43×10−3 (±7%).