Abstract
Simulation experiments on both series and parallel electromigration (EM) test structures were carried out under current (or voltage) stress and further analysed by means of the total resistance (TR) analysis and a software package “ failure” in order to calculate and to compare the behaviour of both EM test structures. These simulation experiments show that the parallel EM test structure is a correct approach for the determination of the failure time of submicron interconnects, the activation energy and the current density exponent n of the thermally driven process, therefore leading to a very substantial reduction of the number of samples that are needed to perform the EM tests.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
