Abstract
A new Auger electron spectroscopical sputter depth profiling method was developed to determine the interdiffusion coefficient for the initial stage of diffusion annealing of thin films. The method is based on (i) adoption of an interdiffusion model appropriate for the specimen investigated and (ii) convolution of an accordingly calculated diffusion-induced concentration profile with the smearing effects due to atomic mixing, surface/interface roughness, escape depth of the Auger electrons, and preferential sputtering. The diffusion-induced concentration profile and the interdiffusion coefficient are determined by fitting in an iterative least-squares procedure of the calculated Auger electron spectroscopical depth profile to the measured one. The method was applied to bilayered and multilayered structures, exhibiting dominant grain-boundary diffusion and dominant volume diffusion, respectively. A very small extent of interdiffusion, characterized by diffusion distances as small as 1 nm, could be quantified.
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