Abstract
It is established for the first time that the phenomenon of ion-stimulated surface segregation can be used to increase the depth resolution of Auger profiling during analysis of the Inx Ga1 − x As/GaAs heterostructures. It is demonstrated that, by varying the energy of the sputtering Ar+ ion beam from 1 to 0.5 keV in the region of the GaAs/InGaAs heterojunction, the junction sharpness can be estimated at a resolution on the order of 0.5 nm determined by a difference in the projected range of Ar+ ions and independent of the escape depth of the Auger electrons.
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