A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs

Daniel Tomaszewski,Grzegorz Głuszko,Krzysztof Kucharski,Jolanta Malesińska

doi:10.1016/j.sse.2019.03.058

A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs

Daniel Tomaszewski, Grzegorz Głuszko + Show 2 more

https://doi.org/10.1016/j.sse.2019.03.058

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Journal: Solid State Electronics

Publication Date: Mar 21, 2019

#Effective Channel Size #Shortening Of Channel + Show 8 more

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Abstract

Methods for characterization of MOSFET gate overlap capacitances are briefly discussed. Considerations of their shortcomings due to the neglected shortening and/or narrowing of the MOSFET channel in relation to its drawn size have led to development of a new method for a simultaneous extraction of the gate overlap capacitances and of the channel width and length variations. The approach is presented and illustrated using experimental data obtained by C-V measurements of the MOSFETs in aCMOS test structure. The characterization results are compared with the parameters obtained via I-V measurements of the corresponding devices.

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