Abstract
When using a MEMS sensor to measure the vacuum of a medium, the transition flow between the viscous flow and molar flow is usually used to describe the gas convection due to the physical principle, which is difficult to study through analysis and simulation. In this study, the description of gas flow under different pressures in a CMOS-MEMS vacuum sensors has been incorporated into a new behavioral ANSYS model. The proposed model was built and the characteristic parameters in the model were obtained based on a CMOS-MEMS thermopile patterned with circular symmetry and an embedded heater as a heat source. It contains a characteristic length to describe the effective distance of heat dissipation to the silicon substrate, and the corresponding transition pressure to describe the symmetrical phenomenon of gas heat conduction. The macro-model is based on the description of the physical characteristics of heat transfer and the characteristic parameters of the CMOS-MEMS vacuum sensor. The characteristic length of 49 μm and the corresponding transition pressure of 2396 mTorr for the thermoelectric-type vacuum sensor were extracted and verified successfully. The results show that the average error for the prediction of vacuum sensing by the macro-model we proposed is about 1.11%. This approach provides more applications for vacuum analysis. It can reduce the complexity of simulation and analysis and provide better simulation effects, including gas conduction mechanisms.
Highlights
In the past several decades, numerous vacuum gauges with a drastic reduction of volume have been developed [1,2]
We present a physics-based multiple parameters macro-model that allows for the efficient simulation of the response of the thermal-type vacuum sensor patterned with circular symmetry and an embedded heater as a heat source, which depended on gas conduction on the system-level
To conduct the theoretical formulations for simulation of the vacuum sensor, the Knudsen number Kn was adopted, which is most widely used to study the design of microfluidics and mechanical systems (MEMS) devices when the gas flow ranges from continuum to free-molecular
Summary
In the past several decades, numerous vacuum gauges with a drastic reduction of volume have been developed [1,2]. CMOS-MEMS, with its batch fabrication techniques, enables vacuum sensing components to be manufactured with increased performance and reliability, combined with the obvious advantages of low consumed power, and reduced physic size, volume, and weight at a relatively low-cost level [2,3] It is integrated on the same chip with control or processing circuitry by using a commercial semiconductor device process [2,3,4]. We present a physics-based multiple parameters macro-model that allows for the efficient simulation of the response of the thermal-type vacuum sensor patterned with circular symmetry and an embedded heater as a heat source, which depended on gas conduction on the system-level. The macro-modelofofvacuum vacuum measurement is governed and described heat equation transfer
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