Abstract
A new, widely-used, lock-in amplifier-based deep-level transient spectroscopy (DLTS) test and measurement system has been developed that efficiently digitizes and analyzes through conventional DLTS methods. The fundamental principle of DLTS, using the n+p diode, is introduced first. Part of the DLTS system setup is discussed in terms of the accuracy, optimization, and processing of measurement results. The established system is subsequently applied to study deep-level traps in the antimony sulfide (Sb2S3) and the Copper Indium Gallium Selenium (CIGS) thin-film solar cell. One electron trap and one hole trap were found in each of the two solar cells, and the calculated results are within a reasonable range compared with previous reports. It is shown experimentally that the DLTS system can be employed in a variety of test scenarios and the results are fundamentally in agreement with the mainstream system performance.
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