Abstract
The purpose of our work is to report a new lateral MOS-gated thyristor, named LCMT, with increased safe operating area (SOA) and decreased turn-off characteristics. In the proposed LCMT, the SOA is improved due to increased current saturation capability by elimination of the parasitic thyristor. The turn-off time is decreased by employing a p+ diverter which successfully diverts holes during the turn-off process. Our experimental results show that the LCMT also exhibits positive-temperature characteristics. We compare the results for the LCMT with those of the widely used LIGBT (lateral insulated gate bipolar transistor).
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