Abstract
The authors describe an eight-node heterojunction bipolar transistor model suitable for circuit simulation, for which the Gummel-Poon model was used as a basis. Both the large-signal DC characteristics and the small-signal behavior up to 18 GHz are accurately modeled. The nonlinear current gain associated with HBTs (heterojunction bipolar transistors) is included as well as nonlinear intrinsic base and collector resistances. The negative output conductance seen at high current levels is modeled as a reduction in current proportional to the power output of the transistor. The proposed model is suitable for circuit simulation and has been implemented in SPICE2 version G.6, PSPICE, and HP Microwave Design System MDS. >
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