Abstract
We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60keV 1H+ ion implantation to a fluence of 7×1016cm−2.
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