Abstract
A new isolation method for high packing density MOS devices has been developed. In this method the LOCOS technique is applied to wide isolation regions and the buried-oxide technique is applied to isolation regions less than 2 µm wide. No additional masks are needed in order to form SiO 2 film in the wide field regions because the photoresist is thicker near steps and inside the narrow trenches. For reducing the hump that appears in subthreshold current characteristics of n-channel MOSFET's, Using buried-oxide isolation, tilt-angle implantation to each of the four sidewalls is performed as a channel stop. The Sidewall channel stop can also control the narrow-channel effect.
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