Abstract
A new Λ-type voltage-controlled negative resistance device called the “Lambda MOSFET” is presented, which consists of three integrated n( p)-channel enhancement mode metal-oxide-silicon field effect transistors. The main integrated circuit construction of the Lambda MOSFET is to connect an inverter of the n( p)-channel enhancement mode MOSFET with load operated at the saturation region (NELS) and a n( p)-MOS driver, which can be easily fabricated by existing planar MOSFET technologies. The operational principles and the characteristics of the proposed new device are discussed.
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