Abstract
A new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated. Preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W. The structure can potentially be tailored during fabrication for use in several infrared bands of interest, including the 3 to 5 micron band and the 8 to 10 micron band.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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