Abstract
A new In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of I V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
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